Analytical measurements of contact resistivity in two-dimensional WSe₂ field-effect transistors

Abstract It becomes clear that, in two-dimensional (2D) materials-based devices, sheet resistances underneath electrodes change due to a metallic contact, leading substantial errors determining transfer length. Thus, the extraction of length and corresponding contact resistivity must be revisited assess performance 2D devices. In this study, we present three different approaches WSe 2 field effect transistors for first time by theoretical analysis using resistive network model as well electrical measurements contact-end resistance methods, based on followings: (a) multiplied ( R cf W ⋅ L Tk ), (b) integrated $\smallint\limits_0^L R \left( x \right) W{\mkern 1mu} {\text{d}}x$?> ∫ 0 ( x ) d (c) raised constant power ${\left( {{R_{{\text{cf}}}}W} \right)^\alpha }$?> α ). These methods give rise almost identical resistivity, validating our its accuracy from results obtained various metals plasma doping conditions. This work serves foundation future research determination physical parameters responsible carrier transport at interface semiconductor